參數(shù)資料
型號(hào)： FSTJ9055R
廠商： Intersil Corporation
英文描述： Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
中文描述： 輻射，SEGR硬化抗P通道功率MOSFET
文件頁數(shù)： 3/8頁
文件大?。?/td> 72K
代理商： FSTJ9055R
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
t
rr
I
SD
= 62A
I
SD
= 59A, dI
SD
/dt = 100A/
μ
s
-0.6
-
-1.8
V
Reverse Recovery Time
-
-
110
ns
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= -48V
V
GS
= -12V, I
D
= 62A
V
GS
= -12V, I
D
= 39A
-60
-
V
Gate to Source Threshold Volts
(Note 3)
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
-
100
nA
Zero Gate Leakage
(Note 3)
-
25
μ
A
Drain to Source On-State Volts
(Notes 1, 3)
-
-1.55
V
Drain to Source On Resistance
(Notes 1, 3)
-
0.023
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
-60
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
μ
)
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
Br
37
36
10
-60
Br
37
36
15
-36
Br
37
36
20
-24
NOTES:
4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T
C
= 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING
AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
-40
0
0
10
15
20
25
5
V
GS
(V)
V
D
-10
-20
-30
-50
-60
-70
LET = 37MeV/mg/cm
2
, RANGE = 36m
LET = 26MeV/mg/cm
2
, RANGE = 43m
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
-300
-100
-10
L
DRAIN SUPPLY (V)
-1000
ILM = 10A
300A
1E-4
1E-5
1E-6
-30
100A
30A
1E-7
1E-3
FSTJ9055D, FSTJ9055R
相關(guān)PDF資料
PDF描述
FSTJ9055R4 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTU16211 24-Bit Bus Switch with .2V Undershoot Protection (Preliminary)
FSTU16211MTD 24-Bit Bus Switch with .2V Undershoot Protection (Preliminary)
FSTU162211 24-Bit Bus Switch with .2V Undershoot Protection and 25з Series Resistors in Outputs (Preliminary)
FSTU162211MTD 24-Bit Bus Switch with .2V Undershoot Protection and 25з Series Resistors in Outputs (Preliminary)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSTJ9055R1 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTJ9055R3 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTJ9055R4 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSTK 功能描述:電線導(dǎo)管 Fiber Splice Tray - 6 Mechanical or Fus RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FSTMABL 功能描述:以太網(wǎng)和電信連接器 ST MM Connector (3mm & 900um) RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點(diǎn)數(shù)量: 安裝風(fēng)格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點(diǎn)電鍍: 外殼材料:Thermoplastic IP 等級(jí):
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*