參數(shù)資料
型號(hào)： FSS923A0R
廠商： Intersil Corporation
英文描述： 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
中文描述： 第7A，- 200V的電壓，0.650歐姆，拉德硬，SEGR性，P通道功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 56K
代理商： FSS923A0R
4-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSS923A0D, FSS923A0R
-200
-200
UNITS
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
7
4
21
±
20
A
A
A
V
56
22
0.45
21
7
21
W
W
W/
o
C
A
A
A
o
C
o
C
-55 to 150
300
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
-200
-
-
V
Gate Threshold Voltage
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -160V,
V
GS
= 0V
-
-
25
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
-
-
200
nA
Drain to Source On-State Voltage
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 7A
I
D
= 4A,
V
GS
= -12V
-
-
-5.0
V
Drain to Source On Resistance
T
C
= 25
o
C
T
C
= 125
o
C
-
0.530
0.650
-
-
1.24
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -100V, I
D
= 7A,
R
L
= 14.3
, V
GS
= -12V,
R
GS
= 7.5
-
-
20
ns
Rise Time
-
-
35
ns
Turn-Off Delay Time
-
-
55
ns
Fall Time
-
-
30
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -100V,
I
D
= 7A
-
-
60
nC
Gate Charge at 12V
-
35
40
nC
Threshold Gate Charge
-
-
2.4
nC
Gate Charge Source
-
6.1
7.6
nC
Gate Charge Drain
-
16
19
nC
Plateau Voltage
I
D
= 7A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-6
-
V
Input Capacitance
-
900
-
pF
Output Capacitance
-
200
-
pF
Reverse Transfer Capacitance
-
55
-
pF
Thermal Resistance Junction to Case
-
-
2.2
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
60
FSS923A0D, FSS923A0R
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSS923A0R1 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS923A0R3 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS923A0R4 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
FSS923AOD1 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-257AA
FSS923AOD3 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 7A I(D) | TO-257AA
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