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參數(shù)資料
| 型號： | FSS9130R4 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | FSS9130R4 |
3-201
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
1
10
40
0.1
IF R = 0
t
AV
= (L) (IAS) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(IAS*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSS9130D, FSS9130R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSS913A0R1 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R3 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0D | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R4 | 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSS913A0D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| FSS913A0R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
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