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參數(shù)資料
| 型號(hào)： | FSS13A0R1 |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | FSS13A0R1 |
5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
IF R = 0
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
5
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSS13A0D, FSS13A0R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSS13A0R3 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS13A0R4 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSS14 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:1 Amp. Surface Mounted Schottky Barrier Rectifier |
| FSS140 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Load Switching Applications |
| FSS145 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
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