- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375932 > FSF055D (HARRIS SEMICONDUCTOR) 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FSF055D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 中文描述： | 25 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | FSF055D |
3-97
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 25A
I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
MIN
0.6
-
TYP
-
-
MAX
1.8
290
UNITS
V
ns
Forward Voltage
Reverse Recovery Time
Electrical Specifications up to 100K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0, V
DS
= 48V
V
GS
= 12V, I
D
= 25A
V
GS
= 12V, I
D
= 25A
MIN
60
1.5
-
-
-
-
MAX
-
4.0
100
25
0.525
0.020
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
60
60
60
60
60
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
0
-5
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
60
60
48
36
60
48
36
24
12
ION
SPECIES
Ni
Br
Br
Br
I
I
I
I
I
TYPICAL
RANGE (
μ
)
43
36
36
36
31
31
31
31
31
Single Event Effects Safe Operating
Area
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
LET = 60MeV/mg/cm
2
, RANGE = 31
μ
LET = 26MeV/mg/cm
2
, RANGE = 43
μ
40
0
0
-10
-15
-20
-25
-5
V
GS
(V)
V
D
10
20
30
50
60
70
TEMP = 25
o
C
1
2
3
1 -
2 -
3 -
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
300
100
10
L
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSF055D, FSF055R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSF055R | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055D3 | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R1 | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R3 | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R4 | 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSF055D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055D4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-254AA |
| FSF055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| FSF055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。