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參數(shù)資料
| 型號(hào)： | FSC150 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）決策支持系統(tǒng)|芯片 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | FSC150 |
Harris Element Evaluation Based on “JANKC” Level of MIL-PRF-19500K, Amendment 1
SUBGROUP
TEST
MIL-STD-750
QUANTITY
(ACCEPT NO.)
METHOD
CONDITION
1
Wafer Probe/Electrical Test
Per “Pre Radiation Electrical Specifications” Table in this data
sheet.
100%
2
Visual Inspection
2072
100%
3A
Internal/Die Visual Inspection
2072
10 (0)
3B
Sample Assembly
All test samples assembled in the TO-204AE package.
10 Pieces
Minimum (Note 8)
3C
UIS/Gate Stress
Pre-screen for unclamped inductive switching.
Harris imposed testing.
10 Pieces
Minimum (Note 8)
4
Stabilization
1032
Condition C, t = 24 hours
10 (0)
Temperature Cycling
1051
Condition C
Constant Acceleration
2006
Y1 direction
Electrical Test
(Read and Record)
Group A, Subgroups 2, 3, and 4 (per FS150 data sheet
EXCEPT
r
DS(ON)
and V
DS(ON)
Electrical Specifications” table on the previous page)
at 25
o
C, see “Post Radiation
High Temperature Gate Stress
1042
Condition B, t = 48 hours, V
GS
= 80% of rated value
Electrical Tests
(Read and Record)
Group A, Subgroup 2 (per FS150 data sheet
and V
DS(ON)
at 25
C, see “Post Radiation Electrical Specifica-
tions” table on the previous page)
EXCEPT
r
DS(ON)
o
High Temperature Drain Stress
1042
Condition A, t = 240 hours, V
DS
= 80% of rated value
Electrical Test
(Read and Record)
Group A, Subgroup 2 (per FS150 data sheet
and V
DS(ON)
at 25
C, see “Post Radiation Electrical Specifica-
tions” table on the previous page)
EXCEPT
r
DS(ON)
o
Steady State Life Test
1042
Condition A, V
time/temperature conditions:
Option A: T
J
= 175
Option B: T
J
= 150
Option C: T
J
= 125
DS
= 80% of rated value at one of the following
o
o
o
C, t = 240 hours,
C, t = 500 hours or
C, t = 1000 hours
Electrical Test
(Read and Record)
Group A, Subgroups 2 and 3 (per FS150 data sheet
r
DS(ON)
and V
DS(ON)
at 25
Specifications” table on the previous page)
EXCEPT
o
C, see “Post Radiation Electrical
5A
Wire Bond Evaluation
2037
Condition A
10 (0) Wires or
20 (1) Wires
5B
Die Shear Evaluation
2017
5 (0)
6
SEM
2077
Performed as part of wafer lot acceptance prior to element
evaluation
See Method 2077
7
1019
100K RAD (Si). Performed on a wafer by wafer basis prior to
element evaluation.
See Method 1019
NOTE:
8. Sample size is a minimum of 3 die per wafer and 10 die minimum per inspection lot. Sample acceptance per MIL-PRF-19500, paragraph G.5.3.
FSC150
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