參數(shù)資料
型號： FSB50550T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 運動控制電子
英文描述： Smart Power Module (SPM)
中文描述： AC MOTOR CONTROLLER, 3.5 A, DMA23
文件頁數(shù)： 3/8頁
文件大小： 166K
代理商： FSB50550T
3
www.fairchildsemi.com
FSB50550T Rev. A
F
Electrical Characteristics
(T
J
= 25°C, V
CC
=V
BS
=15V Unless Otherwise Specified)
Inverter Part
(Each FRFET Unless Otherwise Specified)
Symbol
Parameter
Control Part
(Each HVIC Unless Otherwise Specified)
Symbol
Parameter
Note:
1. For the measurement point of case temperature T
C
, please refer to Figure 3 in page 4.
2. BV
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. V
PN
should be sufficiently less than this value considering the
effect of the stray inductance so that V
DS
should not exceed BV
DSS
in any case.
3. t
and t
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Package Marking & Ordering Information
Device Marking
Device
Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown
Voltage
V
IN
= 0V, I
D
= 250
μ
A (Note 2)
500
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Tem-
perature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
-
0.53
-
V
I
DSS
Zero Gate Voltage
Drain Current
V
IN
= 0V, V
DS
= 500V
-
-
250
μ
A
R
DS(on)
Static Drain-Source
On-Resistance
V
CC
= V
BS
= 15V, V
IN
= 5V, I
D
= 1.2A
-
1.3
1.7
V
SD
Drain-Source Diode
Forward Voltage
V
CC
= V
BS
= 15V, V
IN
= 0V, I
D
= -1.2A
-
-
1.2
V
t
ON
t
OFF
t
rr
E
ON
E
OFF
Switching Times
V
PN
= 300V, V
CC
= V
BS
= 15V, I
D
= 1.2A
V
IN
= 0V
5V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
-
560
-
ns
-
440
-
ns
-
130
-
ns
-
71
-
μ
J
-
11
-
μ
J
RBSOA
Reverse-bias Safe Oper-
ating Area
V
PN
= 400V, V
CC
= V
BS
= 15V, I
D
= I
DP
, R
EH
= 0
V
DS
=BV
DSS
, T
J
= 150°C
High- and low-side FRFET switching (Note 4)
Full Square
Conditions
Min
Typ Max
Units
I
QCC
Quiescent V
CC
Current
V
CC
=15V, V
IN
=0V
Applied between V
CC
and COM
Applied between V
B(U)
-U,
V
B(V)
-V, V
B(W)
-W
-
-
160
μ
A
I
QBS
Quiescent V
BS
Current
V
BS
=15V, V
IN
=0V
-
-
100
μ
A
UV
CCD
UV
CCR
UV
BSD
UV
BSR
V
IH
V
IL
I
IH
I
IL
Low-side Undervoltage
Protection (Figure 6)
V
CC
Undervoltage Protection Detection Level
V
CC
Undervoltage Protection Reset Level
V
BS
Undervoltage Protection Detection Level
V
BS
Undervoltage Protection Reset Level
Logic High Level
Applied between IN and COM
Logic Low Level
7.4
8.0
9.4
V
8.0
8.9
9.8
V
High-side Undervoltage
Protection (Figure 7)
7.4
8.0
9.4
V
8.0
8.9
9.8
V
ON Threshold Voltage
2.9
-
-
V
OFF Threshold Voltage
-
-
0.8
V
Input Bias Current
V
IN
= 5V
V
IN
= 0V
Applied between IN and COM
-
10
20
μ
A
-
-
2
μ
A
Package
Reel Size
Tape Width
Quantity
FSB50550T
FSB50550T
SPM23AC
-
-
15
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相關代理商/技術參數(shù)
參數(shù)描述
FSB50550T_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢)
FSB50550TB 功能描述:IGBT 模塊 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550TB2 功能描述:IGBT 模塊 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550U 功能描述:IGBT 模塊 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSB50550US 功能描述:IGBT 模塊 500V, 1.2A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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