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參數(shù)資料
| 型號： | FSB50250US |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)動控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, DMA23 |
| 封裝： | SPM-23 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 298K |
| 代理商： | FSB50250US |
2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50250US Rev. A
FSB50250US
Smart
Powe
rMod
u
le
(SPM)
February 2009
FSB50250US
Smart Power Module (SPM)
Features
500V RDS(on)=4.2Ω(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
3 divided negative dc-link terminals for inverter current sens-
ing applications
HVIC for gate driving and undervoltage protection
3/5V CMOS/TTL compatible, active-high interface
Optimized for low electromagnetic interference
Isolation voltage rating of 1500Vrms for 1min.
Surface mounted device package
Moisture Sensitive Level (MSL) 3
General Description
FSB50250US is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50250US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50250US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
ID25
Each FRFET Drain Current, Continuous
TC = 25°C
1.1
A
ID80
Each FRFET Drain Current, Continuous
TC = 80°C
0.8
A
IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100μs
2.8
A
PD
Maximum Power Dissipation
TC = 25°C, Each FRFET
13
W
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB(U)-U, VB(V)-V, VB(W)-W
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-50 ~ 150
°C
RθJC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
9.3
°C/W
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Vrms
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