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參數(shù)資料
| 型號： | FSAB20PH60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Smart Power Module for Partial Switching Converter |
| 中文描述： | 1-OUTPUT DC-DC UNREG PWR SUPPLY MODULE |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 589K |
| 代理商： | FSAB20PH60 |
5
www.fairchildsemi.com
FSAB20PH60 Rev. A
F
Absolute Maximum Ratings
Thermal Resistance
Symbol
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified)
Main Circuit Part
Symbol
Note:
3. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Parameter
Conditions
Min.
Typ.
Max.
Units
R
th(j-c)Q
Junction to Case Thermal
Resistance
Each IGBT under Operating Condition
-
-
2.8
°C/W
R
th(j-c)D
Each Diode under Operating Condition
-
-
2.6
°C/W
Item
Conditions
Min.
Typ.
Max.
Units
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
CC
= V
BS
=15V
V
IN
= 5V
V
IN
= 0V
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 6.5A
V
IN
= 0V
5V, Inductive Load
(Note 3)
I
C
= 6.5A, T
J
= 25°C
-
2.1
2.6
V
V
FM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
CES
Diode Forward Voltage
I
C
= 20A, T
J
= 25°C
-
1.1
1.5
V
Switching Times
-
0.48
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
A
-
0.85
-
-
0.56
-
-
0.10
-
-
1.35
-
Collector - Emitter
Leakage Current
V
CE
= V
CES
-
-
250
I
R
Diode Leakage Current
V
R
= V
RRM
-
-
250
μ
A
V
CE
I
C
V
IN
t
OFF
t
C(OFF)
V
IN(OFF)
10% V
CE
10% I
C
V
CE
I
C
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
10% V
CE
90% I
C
100% I
C
t
rr
120% I
C
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