參數(shù)資料
型號： FS7VS-16A
廠商： POWEREX INC
元件分類： JFETs
英文描述： Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述： 7 A, 800 V, 1.64 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220S, 3 PIN
文件頁數(shù)： 3/4頁
文件大?。?/td> 40K
代理商： FS7VS-16A
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7VS-16A
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0
4
8
12
16
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
–1
10
0
2
3
5 7
10
1
2
3
5 7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
10
1
10
2
2
3
5
7
10
3
2
3
5
7
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
10
4
5
3
7
2
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
–1
10
0
2
3
5 7
10
1
2
3
5 7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
0
10
20
30
40
50
0
4
8
12
16
20
I
D
= 14A
T
C
= 25°C
Pulse Test
7A
3A
0
10
–1
2
1.0
2.0
3.0
4.0
5.0
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
V
GS
= 10V
T
C
= 25°C
Pulse Test
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
相關(guān)PDF資料
PDF描述
FS7VS-18A HIGH-SPEED SWITCHING USE
FS7VS-18A Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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PSD935F3V-15B81I Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 30000uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-0.1pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
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參數(shù)描述
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