參數(shù)資料
型號: FS6S1265RE-TU
文件頁數(shù): 3/10頁
文件大小: 595K
代理商: FS6S1265RE-TU
FS6S1265RE
3
Electrical Characteristics (SFET Part)
(Ta = 25
°
C unless otherwise specified)
Note:
1. Pulse test: pulse width
300us, duty 2%
2.
Parameter
Drain-Source Breakdown Voltage
Symbol
BV
DSS
Conditions
Min.
650
-
Typ.
-
-
Max.
-
200
Unit
V
μ
A
V
GS
= 0V, I
D
= 50
μ
A
V
DS
=Max, Rating, V
GS
= 0V
V
DS
= 0.8Max, Rating,
V
GS
= 0V, T
C
= 125
°
C
V
GS
= 10V, I
D
= 4.5A
V
DS
= 50V, I
D
= 4.5A
Zero Gate Voltage Drain Current
I
DSS
-
-
300
μ
A
Static Drain-Source on Resistance
(1)
Forward Transconductance
(2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(on)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
-
-
-
-
-
-
-
-
0.7
-
1820
185
32
38
120
200
100
0.9
-
-
-
-
-
-
-
-
S
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
pF
V
DD
= 0.5BV
DSS
, I
D
= 12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
= 10V, I
D
= 12.0A,
V
DS
= 0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
nS
Qg
-
60
-
nC
Qgs
-
10
-
Gate-Drain (Miller) Charge
Qgd
-
30
-
S
1
R
---
=
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