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參數(shù)資料
| 型號(hào)： | FS50VSJ-2 |
| 廠商： | POWEREX INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 50 A, 100 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220S, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 39K |
| 代理商： | FS50VSJ-2 |
Feb.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
MITSUBISHI Nch POWER MOSFET
FS50VSJ-2
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
37
40
0.93
40
3000
410
210
22
65
270
160
1.0
—
90
—
±
0.1
0.1
2.0
48
52
1.20
—
—
—
—
—
—
—
—
1.5
1.78
—
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 100V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
GS
= 4V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 50V, I
D
= 25A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 25A, V
GS
= 0V
Channel to case
I
S
= 50A, dis/dt = –100A/
μ
s
PERFORMANCE CURVES
0
20
40
60
80
100
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2
3
2 3
tw = 10
m
s
T
C
= 25°C
Single Pulse
100
m
s
10ms
100ms
1ms
DC
0
20
40
60
80
100
0
2
4
6
8
10
P
D
= 70W
V
GS
= 10V
T
C
= 25°C
Pulse Test
3V
4V
5V
0
10
20
30
40
50
0
1
2
3
4
5
5V
2.5V
3.5V
T
C
= 25°C
Pulse Test
V
GS
= 10V
3V
P
D
= 70W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FS50VSJ-3 | HIGH-SPEED SWITCHING USE |
| FS50VSJ-3 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS5AS-06 | HIGH-SPEED SWITCHING USE |
| FS5AS-06 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS5AS-10A | High-Speed Switching Use Nch Power MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS50VSJ-2-A1 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50VSJ-2-T11 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50VSJ3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 50A I(D) | TO-263AB |
| FS50VSJ-3 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET |
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