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參數(shù)資料
| 型號(hào)： | FS10VSJ-2 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | CONN, RCPT (F), SMB, 50 OHM, RTANG PC MTG, AU |
| 中文描述： | 10 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220S, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | FS10VSJ-2 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
0
8
16
24
32
40
0
0.4
0.8
1.2
1.6
2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
= 20V
50V
80V
Tch = 25°C
I
D
= 10A
S
S
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
0.5
0.2
D = 1.0
Single Pulse
0.1
0.05
0.02
0.01
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|---|---|
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