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參數(shù)資料
| 型號(hào)： | FS10VS-5 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關(guān)使用 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 42K |
| 代理商： | FS10VS-5 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-5
HIGH-SPEED SWITCHING USE
40
32
24
16
8
00
4
8
12
16
20
I
D
= 20A
T
C
= 25°C
Pulse Test
15A
10A
5A
40
32
24
16
8
00
4
8
12
16
20
V
DS
= 50V
T
C
= 25°C
Pulse Test
10
–1
10
1
7
5
3
2
10
0
2 3
5 7 10
1
10
0
7
5
3
2
2 3
5 7 10
2
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C
75°C
2 3
5 7 10
0
10
3
7
5
3
2
10
2
7
5
2 3
5 7 10
1
10
–1
10
1
3
2
T
ch
= 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
0
10
–1
2 3
5 710
0
2 3 5 710
1
2 3 5 710
2
1.0
0.8
0.6
0.4
0.2
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
2 3 5 710
1
2 3 5 710
0
2 3
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS10VS6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 10A I(D) | TO-263AB |
| FS10VS-6 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS10VS9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-263AB |
| FS10VS-9 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FS10VS-9A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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