參數(shù)資料
型號(hào): FS10KM
廠商: Mitsubishi Electric Corporation
英文描述: HIGH-SPEED SWITCHING USE
中文描述: 高速開(kāi)關(guān)使用
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 40K
代理商: FS10KM
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KM-3
HIGH-SPEED SWITCHING USE
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V 10V
T
C
= 25°C
Pulse Test
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
T
C
= 25°C
Pulse Test
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
6V
7V
5V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
10V
6V
5V
7V
10
0
10
1
2
3
5
7
10
2
2
3
5
7
2
3
3
2
10
1
3 5 7
2
10
2
3 5 7
2
2
10
3
3 5 7
5
7
tw = 10
m
s
T
C
= 25°C
Single Pulse
100
m
s
10ms
1ms
DC
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
150
2.0
3.0
122
0.61
12
1250
175
75
25
30
60
34
1.0
100
±
0.1
0.1
4.0
170
0.85
1.5
5.00
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 150V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 80V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 5A, V
GS
= 0V
Channel to case
I
S
= 10A, dis/dt = –100A/
μ
s
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
相關(guān)PDF資料
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