參數(shù)資料
型號: FS10KM-10A
廠商: Mitsubishi Electric Corporation
英文描述: CAP 470PF 200V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF
中文描述: 高速開關(guān)使用
文件頁數(shù): 2/4頁
文件大?。?/td> 65K
代理商: FS10KM-10A
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
3.0
0.70
3.5
8.0
1100
110
25
20
30
140
40
1.5
I
D
= 1mA, V
GS
= 0V
I
GS
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 5A, V
GS
= 0V
Channel to case
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
500
±
30
2.5
4.8
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
±
10
1
3.5
0.90
4.5
2.0
3.57
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1
10
0
7
5
3
10
1
5
3
7
2
5
3
7
2
5
3
7
2
10
1
3
5 7
2
10
2
3
5 7
7
2
3
5
2
2
0
4
8
12
16
20
0
10
20
30
40
50
0
2
4
6
8
10
0
4
8
12
16
20
T
C
= 25
°
C
Single Pulse
100
μ
s
tw =
10
μ
s
1ms
DC
10
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V,10V,8V
P
D
= 35W
T
C
= 25
°
C
Pulse Test
4V
5V
6V
P
D
= 35W
V
GS
= 20V,10V,6V
T
C
= 25
°
C
Pulse Test
5V
4V
PERFORMANCE CURVES
相關(guān)PDF資料
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