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參數(shù)資料
| 型號： | FS0808BD |
| 英文描述： | Standard Gate SCRs |
| 中文描述： | 標(biāo)準(zhǔn)門可控硅 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 134K |
| 代理商： | FS0808BD |
Dec - 02
Fig. 1: Maximum average power dissipation
versus average on-state current.
FS08...D
SURFACE MOUNT SCR
0
2
10
8
6
4
2
0
4
6
P (W)
IT(av)(A)
1
3
5
7
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
α
360 o
Fig. 2: Average and D.C. on-state current
versus case temperature.
I T(av) (A)
T case (oC)
10
8
6
4
2
0
0
25
50
75
100
125
α
= 180 o
D.C.
IGT, IH (Tj) / IGT, IH (Tj = 25 oC)
Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.
Tj (oC)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
20
60
80 100
0
40
120 140
IGT
IH & IL
1
10
100
1000
Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.
80
70
60
50
40
30
20
10
0
I TSM (A)
Number of
cycles
Tj initial = 25 oC
300
1
10
ITSM(A). I
2
t (A
2
s)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
2
5
100
10
ITSM
20
50
I
2
t
Tj initial = 25 oC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FS0808BI | Standard Gate SCRs |
| FS0808DD | Standard Gate SCRs |
| FS0808DI | Standard Gate SCRs |
| FS0808MD | Standard Gate SCRs |
| FS0808MI | Standard Gate SCRs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS0808BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Standard Gate SCRs |
| FS0808DD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Standard Gate SCRs |
| FS0808DI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Standard Gate SCRs |
| FS0808MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Standard Gate SCRs |
| FS0808MI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Standard Gate SCRs |
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