參數(shù)資料
型號(hào): FRX130R1
廠(chǎng)商: HARRIS SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: Radiation Hardened N-Channel Power MOSFETs
中文描述: 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 35K
代理商: FRX130R1
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 2. SAFE OPERATING AREA CURVE CASE
TEMPERATURE = 25
o
C
FIGURE 3. TYPICAL UNCLAMPED INDUCTIVE SWITCHING
FAILURE ONSET AVALANCHE MODE
FIGURE 4. NORMALIZED ON-RESISTANCE vs NEUTRON
FLUENCE N-CHANNEL
FIGURE 5. TYPICAL PHOTO CURRENT vs GAMMA RATE
FIGURE6. DRAININDUCTANCEREQUIREDTOLIMITGAMMA
DOT CURRENT TO I
LM
CASE TEMPERATURE (T
C
)
0
50
100
I
FRX130
2
4
6
8
VDS DRAIN-TO-SOURCE (V)
50
100
I
10
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
10ms
FRX130
TIME OF INDUCTIVE DISCHARGE (
μ
s)
100
500
I
30
20
50
80
FRX130
1E13
1E14
1E15
FLUENCE - NEUTRONS/cm
2
4
3
2
N
D
50V
100V
500V
RATED BVDSS
200V
1E8
1E9
1E10
GAMMA DOT - RAD (Si)/s
100
10
1
D
FRX130
30
100
300
DRAIN SUPPLY (V)
1E-4
1E-5
1E-6
L
ILM = 300A
ILM = 100A
ILM = 30A
ILM = 10A
GAMMA DOT
FRX130D, FRX130R, FRX130H
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