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參數(shù)資料
| 型號(hào)： | FRM9140R |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 47K |
| 代理商： | FRM9140R |
4-3
Post-Radiation Electrical Specications TC = +25oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM9140D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRM9140H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM9140D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRM9140H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM9140D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM9140H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM9140D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM9140H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM9140D, R
VGS = 0, VDS = -80V
-
25
A
(Note 5, 6)
IDSS
FRM9140H
VGS = 0, VDS = -80V
-
100
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRM9140D, R
VGS = -10V, ID = 11A
-
-3.47
V
(Note 1, 5, 6)
VDS(on)
FRM9140H
VGS = -16V, ID = 11A
-
-5.21
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM9140D, R
VGS = -10V, ID = 7A
-
0.300
(Note 1, 5, 6)
RDS(on)
FRM9140H
VGS = -14V, ID = 7A
-
0.450
NOTES:
1. Pulse test, 300
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 5/19/90 on TA 17741 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRM9140D, FRM9140R, FRM9140H
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| FRM9230D | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230H | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM9230D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9230R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9240D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRM9240H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs |
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