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參數(shù)資料
| 型號(hào)： | FRM5N142GW |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | InGaAs-APD/Preamp Receiver |
| 中文描述： | InGaAs-APD/Preamp接收機(jī) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 336K |
| 代理商： | FRM5N142GW |
FEATURES
Small Form Factor Package(GW): 9 pins coplanar
Integrated Design Optimizes Performance at
Bit Rates up to 10.7Gb/s
High Gain: 4k
(Single-ended), 8k
(Differential)
High Sensitivity: -27dBm (typ.)
Electrical Differential Output
Wide Bandwidth: 8.5GHz (typ.)
Operates in both C and L wavelength bands
Wide Operating Temperature Range: -5°C to +75°C
APPLICATIONS
This APD with HBT preamplifier is intended to function as an optical receiver
at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber
systems operating up to 10.7Gb/s.The typical transimpedance (Zt) value
of 4,000
optimizes the total bandwidth for 10Gb/s application.The detector
preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5N142GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs
HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF).The APD is
processed with modern MOVPE techniques resulting in a reliable performance over a wide
range of operating conditions.The lens coupling system and the single mode fiber are
assembled using Nd YAG welding.
1
Edition 1.1
October 2003
InGaAs-APD/Preamp
Receiver
FRM5N142GW
Parameter
Symbol
Storage Temperature
Tstg
-40 to +85
°
C
Operating Temperature
-5 to +75
°
C
Top
Supply Voltage
-6 to 0
V
Vss
PIN Reverse Voltage
0 to VB(Note)
V
VR
PIN Reverse Current
5
mA
IR
(peak)
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25
°
C)
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
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