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參數(shù)資料
| 型號： | FRM244D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 250 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 47K |
| 代理商： | FRM244D |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM244D, R
VGS = 0, ID = 1mA
250
-
V
(Note 5, 6)
BVDSS
FRM244H
VGS = 0, ID = 1mA
238
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM244D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRM244H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM244D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM244H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM244D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM244H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM244D, R
VGS = 0, VDS = 200V
-
25
μ
A
(Note 5, 6)
IDSS
FRM244H
VGS = 0, VDS = 200V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRM244D, R
VGS = 10V, ID = 12A
-
5.04
V
(Note 1, 5, 6)
VDS(on)
FRM244H
VGS = 16V, ID = 12A
-
7.56
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM244D, R
VGS = 10V, ID = 7A
-
0.400
(Note 1, 5, 6)
RDS(on)
FRM244H
VGS = 14V, ID = 7A
-
0.600
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/30/90 on TA 17643 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRM244D, FRM244R, FRM244H
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRM244H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRM244R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FR-M25-AC240V-16 | 制造商:Panasonic Electric Works 功能描述: |
| FRM-25GR-52-100R | 功能描述:RES FUSE METAL 100 OHM 1/4W 2% RoHS:是 類別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:2,500 系列:RSF 電阻（歐姆）:15 功率（瓦特）:0.5W，1/2W 復(fù)合體:金屬氧化物薄膜 特點:耐燃 溫度系數(shù):±200ppm/°C 容差:±5% 封裝/外殼:軸向 尺寸/尺寸:0.138" 直徑 x 0.354" L（3.50mm x 9.00mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RS 1/2 15 5% RRS 1/2 15 5% R-NDRS1/2155%RRS1/2155%R-NDRS1/215JRRS1/215JR-ND |
| FRM-25GR-52-10R | 功能描述:RES FUSE METAL 10 OHM 1/4W 2% RoHS:是 類別:電阻器 >> 通孔電阻器 系列:FRM 產(chǎn)品變化通告:Global Part Number Change 9/Aug/2010 標(biāo)準(zhǔn)包裝:2,500 系列:RSF 電阻（歐姆）:15 功率（瓦特）:0.5W，1/2W 復(fù)合體:金屬氧化物薄膜 特點:耐燃 溫度系數(shù):±200ppm/°C 容差:±5% 封裝/外殼:軸向 尺寸/尺寸:0.138" 直徑 x 0.354" L（3.50mm x 9.00mm） 高度:- 端子數(shù):2 包裝:帶卷 (TR) 其它名稱:RS 1/2 15 5% RRS 1/2 15 5% R-NDRS1/2155%RRS1/2155%R-NDRS1/215JRRS1/215JR-ND |
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