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參數(shù)資料
| 型號(hào)： | FRM130H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-204AA, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 47K |
| 代理商： | FRM130H |
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
42
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 14A
-
2.65
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 9A
-
.18
Turn-On Delay Time
td(on)
VDD = 50V, ID = 14A
-
30
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
218
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
156
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
144
Gate-Charge Threshold
QG(th)
VDD = 50V, ID = 14A
IGS1 = IGS2
0
≤
VGS
≤
20
1
4
nc
Gate-Charge On State
QG(on)
18
74
Gate-Charge Total
QGM
36
146
Plateau Voltage
VGP
3
14
V
Gate-Charge Source
QGS
3
14
nc
Gate-Charge Drain
QGD
9
36
Diode Forward Voltage
VSD
ID = 14A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 14A; di/dt = 100A/
μ
s
-
800
ns
Junction-To-Case
R
θ
jc
-
1.67
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
60
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM130D, FRM130R, FRM130H
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|---|---|
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