- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375900 > FRL230R (INTERSIL CORP) 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | FRL230R |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 5 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | FRL230R |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRL230D, R
VGS = 0, ID = 1mA
200
-
V
(Note 5, 6)
BVDSS
FRL230H
VGS = 0, ID = 1mA
190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRL230D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRL230H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRL230D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRL230H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRL230D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRL230H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRL230D, R
VGS = 0, VDS = 160V
-
25
μ
A
(Note 5, 6)
IDSS
FRL230H
VGS = 0, VDS = 160V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRL230D, R
VGS = 10V, ID = 5A
-
2.63
V
(Note 1, 5, 6)
VDS(on)
FRL230H
VGS = 16V, ID = 5A
-
3.94
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRL230D, R
VGS = 10V, ID = 3A
-
0.500
(Note 1, 5, 6)
RDS(on)
FRL230H
VGS = 14V, ID = 3A
-
0.750
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 3/03/90 on TA 17632 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRL230D, FRL230R, FRL230H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRL234D | 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL234R | 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL430D | 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL430H | 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL430R | 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRL234D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL234H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL234R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRL251A02401CSOC | 制造商:FUJITSU 功能描述:FUJITSU RELAY 24V |
| FRL251A240/02CS0A-01 | 制造商:FUJITSU Component Ltd 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。