參數(shù)資料
型號(hào)： FRK9160R
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 40 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁數(shù)： 3/6頁
文件大?。?/td> 48K
代理商： FRK9160R
3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRK9160D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRK9160H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRK9160D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRK9160H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRK9160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRK9160H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRK9160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRK9160H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRK9160D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRK9160H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRK9160D, R
VGS = -10V, ID = 40A
-
-3.57
V
(Note 1, 5, 6)
VDS(on)
FRK9160H
VGS = -16V, ID = 40A
-
-5.36
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRK9160D, R
VGS = -10V, ID = 26A
-
0.85
(Note 1, 5, 6)
RDS(on)
FRK9160H
VGS = -14V, ID = 26A
-
0.128
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/8/90 on TA 17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988
FRK9160D, FRK9160R, FRK9160H
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