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參數(shù)資料
| 型號： | FRK9160D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | HERMETIC SEALED, METAL, TO-204AE, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | FRK9160D |
3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRK9160D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRK9160H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRK9160D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRK9160H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRK9160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRK9160H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRK9160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRK9160H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRK9160D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRK9160H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRK9160D, R
VGS = -10V, ID = 40A
-
-3.57
V
(Note 1, 5, 6)
VDS(on)
FRK9160H
VGS = -16V, ID = 40A
-
-5.36
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRK9160D, R
VGS = -10V, ID = 26A
-
0.85
(Note 1, 5, 6)
RDS(on)
FRK9160H
VGS = -14V, ID = 26A
-
0.128
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/8/90 on TA 17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988
FRK9160D, FRK9160R, FRK9160H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRK9160H | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9260D | 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9260H | 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9260R | 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRK9160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-204AE |
| FRK9260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9260H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
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