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參數(shù)資料
| 型號(hào)： | FRK9150H |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | HERMETIC SEALED, METAL, TO-204AE, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | FRK9150H |
4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
78
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 26A
-
-3.41
V
Drain-source On Resistance
RDS(on)
VGS = -10V, ID = 17A
-
.125
Turn-On Delay Time
td(on)
VDD = -50V, ID = 26A
-
164
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
672
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 25
-
326
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
240
Gate-Charge Threshold
QG(th)
VDD = -50V, IDD = 26A
IGS1 = IGS2
0
≤
VGS
≤
20
3
15
nc
Gate-Charge On State
QG(on)
58
234
Gate-Charge Total
QGM
129
518
Plateau Voltage
VGP
-3
-14
V
Gate-Charge Source
QGS
16
66
nc
Gate-Charge Drain
QGD
21
86
Diode Forward Voltage
VSD
ID = 26A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 26A; di/dt = 100A/
μ
s
-
500
ns
Junction-To-Case
R
θ
jc
-
.83
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
30
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRK9150D, FRK9150R, FRK9150H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRK9150R | 30V N-Channel PowerTrench MOSFET |
| FRK9160D | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160H | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R | 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9260D | 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRK9150R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRK9160R3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-204AE |
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