參數(shù)資料
型號： FRE9260D
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
封裝： HERMETIC SEALED, METAL, TO-258AA, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 47K
代理商： FRE9260D
2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-200
-
V
Gate-Treshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage Drain Current
IDSS1
IDSS2
IDSS3
VDS = -200V, VGS = 0
VDS = -160V, VGS = 0
VDS = -160V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
57
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 19A
-
-4.19
V
Drain-Source On Resistance
RDS(on)
VGS = -10V, ID = 12A
-
0.210
Turn-On Delay Time
td(on)
VDD = -100V, ID = 19A
Pulse Width = 3
μ
s
Period = 300
μ
s Rg = 10
0
≤
VGS
≤
10 (See Test Circuit)
-
100
ns
Rise Time
tr
-
700
Turn-Off Delay Time
td(off)
-
400
Fall Time
tf
-
300
Gate-Charge Threshold
QG(th)
VDD = -100V, ID = 19A
IGS1 = IGS2
0
≤
VGS
≤
20
4
16
nc
Gate-Charge On State
QG(on)
94
376
Gate-Charge Total
QGM
182
728
Plateau Voltage
VGP
-3
-16
V
Gate-Charge Source
QGS
21
86
nc
Gate-Charge Drain
QGD
52
210
Diode Forward Voltage
VSD
ID = 19A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 19A; di/dt = 100A/
μ
s
-
1200
ns
Junction-To-Case
R
θ
jc
-
0.83
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRE9260D, FRE9260R, FRE9260H
相關(guān)PDF資料
PDF描述
FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260R HDWR FRAME SNAP-IN .062 BLACK
FRF150D 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
FRF150R 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRE9260H 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FREC12X4BL 功能描述:電線導(dǎo)管 Fitting, End Cap, 12" x 4" (300mm x 100m RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FREC12X4OR 功能描述:電線導(dǎo)管 Fitting, End Cap, 12" x 4" (300mm x 100m RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FREC12X4YL 功能描述:電線導(dǎo)管 Fitting, End Cap, 12" x 4" (300mm x 100m RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
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