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參數(shù)資料
| 型號： | FR1GA |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-221AC |
| 封裝： | GREEN, PLASTIC, SMA FLAT PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 130K |
| 代理商： | FR1GA |
FR1AA thru FR1MA
SURFACE MOUNT
FAST RECOVERY RECTIFIER
REVERSE VOLTAGE – 50 to 1000 Volts
FORWARD CURRENT – 1.0 Ampere
FEATURES
Very low profile package – 0.9mm
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Fast switching for high efficiency
MECHANICAL DATA
Case: JEDEC DO-221AC
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl.)
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating (Matte Tin Finish.)
Reliability tested in accordance with AEC-Q101
Component in accordance to RoHs 2002/95/EC
SMA FLAT
SMA FLAT
DIM.
MIN.
MAX.
A
0.90
1.10
B
1.25
1.65
C
0.15
0.40
D
2.25
2.95
E
4.80
5.60
E1
3.95
4.60
L
0.75
1.50
All dimension in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL FR1AA
FR1BA
FR1DA
FR1GA
FR1JA
FR1KA
FR1MA
UNIT
Device marking code
Note
FR1AA
FR1BA
FR1DA
FR1GA
FR1JA
FR1KA
FR1MA
---
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Average Rectified Output Current
@TL=125°C
I(AV)
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave
IFSM
30
A
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Max.
UNIT
Forward Voltage (1)
IF=1.0A
Tj=25°C
VF
1.3
V
Leakage Current (1)
VR=VDC
Tj=25°C
Tj=125°C
IR
5
200
uA
Maximum Reverse Recovery Time (Note 2)
TRR
150
250
500
ns
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical junction capacitance (3)
CJ
15
pF
Typical thermal resistance _ Junction to Case (4)
RΘJC
26
°C/W
Typical thermal resistance _ Junction to Ambient (4)
RΘJA
85
°C/W
Typical thermal resistance _ Junction to Lead (4)
RΘJL
18
°C/W
Note :
REV. 1, Sep-2010, KSEP01
(1)
300us Pulse width, 2% Duty cycle.
(2)
Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.
(3)
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(4)
Thermal Resistance test performed in accordance with JESD-51. Unit mounted on 0.75t glass-epoxy substrate with foot print copper
pad. RΘJL is measured at the lead of cathode band,
RΘJC is measured at the top centre of body.
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