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參數(shù)資料
| 型號： | FQU30N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 22.7 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT, IPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 660K |
| 代理商： | FQU30N06 |
F
2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
※
N o tes :
1. Z
2. D u ty Fac to r , D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
(t) = 2.85
℃
/W M ax.
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
θ
J
(
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
0
5
10
15
20
25
I
D
,
T
C
, Case Temperature [
℃
]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
※
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
= 10 V
2. I
D
= 11.4 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1. V
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Typical Characteristics
(Continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FQU30N06_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel MOSFET |
| FQU30N06L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| FQU30N06L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| FQU30N06LTU | 功能描述:MOSFET 60V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU30N06TU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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