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參數(shù)資料
| 型號： | FQU13N06 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 10A條（?。﹟至251 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 659K |
| 代理商： | FQU13N06 |
F
Rev. A1. May 2001
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 990
H, I
= 10A, V
= 25V, R
= 25
,
Starting T
= 25°C
3. I
≤
13A, di/dt
≤
300A/us, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to
25°C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 125°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
60
--
--
V
Breakdown Voltage Temperature
--
0.06
--
V/°C
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= 25 V, I
D
= 5.0 A
2.0
--
--
--
4.0
0.14
--
V
S
0.11
4.9
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
240
90
15
310
120
20
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 30 V, I
D
= 6.5 A,
R
G
= 25
--
--
--
--
--
--
--
5
25
8
15
5.8
2.0
2.5
20
60
25
40
7.5
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 48 V, I
D
= 13 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
39
40
10
40
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 10 A
V
GS
= 0 V, I
S
= 13 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
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