參數資料
型號： FQPF9N90C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 900V N-Channel MOSFET
中文描述： 8 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數： 1/10頁
文件大?。?/td> 842K
代理商： FQPF9N90C
2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
F
QF E T
TM
FQP9N90C/FQPF9N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
Features
8.0 A, 900V, R
DS(on)
= 1.4
@V
GS
= 10 V
Low gate charge ( typical 45nC)
Low Crss ( typical 14pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP9N90C
FQPF9N90C
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
900
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
8.0
2.8
32
8.0 *
2.8 *
32 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
900
8.0
20.5
4.0
(Note 2)
(Note 1)
(Note 1)
(Note 3)
205
1.64
68
0.54
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FQP9N90C
0.61
0.5
62.5
FQPF9N90C
1.85
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
●
●
▲
!
!
!
S
!
!
!
!
D
G
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相關代理商/技術參數
參數描述
FQPF9N90CT 功能描述:MOSFET 900V N-Chan Advance Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF9P25 功能描述:MOSFET 250V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPFN10 制造商:Fairchild Semiconductor Corporation 功能描述:
FQPFN90CT 制造商:Fairchild Semiconductor Corporation 功能描述:
FQPPF9N50C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PFC+PWM Combination Controller
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