參數(shù)資料
型號： FQPF8N60CF
廠商： Fairchild Semiconductor Corporation
英文描述： 600V N-Channel MOSFET
中文描述： 600V的N溝道MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 759K
代理商： FQPF8N60CF
2
www.fairchildsemi.com
FQPF8N60CF Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
AS
= 6.26A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
6.26A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQPF8N60CFT
FQPF8N60CFT
TO-220F
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
600
--
--
V
Breakdown Voltage Temperature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.7
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
10
μ
A
--
--
100
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 3.13 A
V
DS
= 40 V, I
D
=3.13 A
(Note 4)
2.0
--
4.0
V
Static Drain-Source On-Resistance
--
1.25
1.5
Forward Transconductance
--
8.7
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
965
1255
pF
Output Capacitance
--
105
135
pF
Reverse Transfer Capacitance
--
12
16
pF
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 6.26A,
R
G
= 25
(Note 4, 5)
--
16.5
45
ns
t
r
Turn-On Rise Time
--
60.5
130
ns
t
d(off)
Turn-Off Delay Time
--
81
170
ns
t
f
Turn-Off Fall Time
--
64.5
140
ns
Q
g
Total Gate Charge
V
DS
= 480 V, I
D
= 6.26A,
V
GS
= 10 V
(Note 4, 5)
--
28
36
nC
Q
gs
Gate-Source Charge
--
4.5
--
nC
Q
gd
Gate-Drain Charge
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.26
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
25
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 6.26 A
V
GS
= 0 V, I
S
= 6.26 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
82
--
ns
Reverse Recovery Charge
--
242
--
nC
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