參數資料
型號： FQPF4N20
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 2.8 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數： 2/8頁
文件大?。?/td> 676K
代理商： FQPF4N20
F
Rev. A1. May 2001
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 240
H, I
= 29A, V
= 15V, R
= 25
,
Starting T
= 25°C
3. I
≤
45A, di/dt
≤
300A/us, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to
25°C
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 24 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
--
--
V
Breakdown Voltage Temperature
--
0.03
--
V/°C
--
--
--
--
--
--
--
--
1
μ
A
μ
A
nA
nA
10
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 14.5 A
V
GS
= 5 V, I
D
= 14.5 A
V
DS
= 15 V, I
D
= 14.5 A
1.0
--
--
--
--
2.5
0.018
0.025
--
V
0.0136
0.0192
21
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
780
420
105
1000
550
140
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 15 V, I
D
= 22.5 A,
R
G
= 25
--
--
--
--
--
--
--
15
130
7.5
60
15
5.0
8.0
40
270
25
130
20
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 24 V, I
D
= 45 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
35
30
29
116
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 29 A
V
GS
= 0 V, I
S
= 45 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
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FQPF4N50 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF4N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF4N80 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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