參數(shù)資料
型號： FQPF26N03L
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 18A I(D) | TO-220F
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 18A條（?。﹟至220F
文件頁數(shù)： 2/8頁
文件大小： 692K
代理商： FQPF26N03L
Rev. A, August 2000
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.09mH, I
= 17A, V
DD
= 25V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
24A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
80
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.08
--
V/°C
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 64 V, T
C
= 150°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
μ
A
μ
A
nA
nA
10
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 8.5 A
--
0.048
0.06
V
DS
= 30 V, I
D
= 8.5 A
--
11
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
580
210
50
750
270
65
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 40 V, I
D
= 24 A,
R
G
= 25
--
--
--
--
--
--
--
10
105
30
35
19
4.2
9.6
30
220
70
80
25
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 64 V, I
D
= 24 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
63
130
17
68
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 17 A
V
GS
= 0 V, I
S
= 24 A,
dI
F
/ dt = 100 A/
μ
s
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