參數(shù)資料
型號: FQP6N90C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 900V N-Channel MOSFET
中文描述: 6 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 860K
代理商: FQP6N90C
Rev. A, April 2003
F
2003 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
θ
JC
(t) = 2.3
//t
1
2
1. Z
JM
- T
C
= P
DM
* Z
θ
JC
(t)
sin gle pu lse
D = 0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
1. Z
(t) = 0.75
/W M ax.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
sin gle pu lse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S quare W ave P ulse D uration [sec]
Typical Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FQP6N90C
Figure 11-2. Transient Thermal Response Curve for FQPF6N90C
t
1
P
DM
t
2
t
1
P
DM
t
2
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相關代理商/技術參數(shù)
參數(shù)描述
FQP6N90C_Q 功能描述:MOSFET 900V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP6P25 功能描述:MOSFET 250V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP70N08 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP70N10 功能描述:MOSFET 100V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP70N10 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220