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參數(shù)資料
| 型號： | FQI33N10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第33A條（丁）|對262AA |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 585K |
| 代理商： | FQI33N10 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
V
DS
= 50V
V
DS
= 80V
Note : I
D
= 33A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0
10
1
10
2
175
Notes :
1. V
= 0V
2. 250 s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
20
40
60
80
100
120
0.00
0.05
0.10
0.15
0.20
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
]
D
I
D
, Drain Current [A]
2
4
6
8
10
10
0
10
1
10
2
175
25
-55
Notes :
1. V
= 40V
2. 250 s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
GS
V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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| FQI34N20L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
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