參數(shù)資料
型號： FQD6N60CTF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 678K
代理商： FQD6N60CTF
2
www.fairchildsemi.com
FQD6N60C Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, I
AS
= 4.0 A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
4.0 A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N60C
FQD6N60CTM
DPAK
380mm
16mm
2500
FQD6N60C
FQD6N60CTF
DPAK
380mm
16mm
2000
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25°C
600
--
--
V
Breakdown Voltage Temperature
Coefficient
--
0.6
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
1
μ
A
μ
A
--
--
10
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 2.0 A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
--
1.7
2.0
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 2.0 A
(Note 4)
--
4.8
--
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
620
810
pF
Output Capacitance
--
65
85
pF
Reverse Transfer Capacitance
--
7
10
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 300 V, I
D
= 5.5 A,
R
G
= 25
(Note 4, 5)
--
15
40
ns
Turn-On Rise Time
--
45
100
ns
Turn-Off Delay Time
--
45
100
ns
Turn-Off Fall Time
--
45
100
ns
Total Gate Charge
V
DS
= 480 V, I
D
= 5.5 A,
V
GS
= 10 V
(Note 4, 5)
--
16
20
nC
Gate-Source Charge
--
3.5
--
nC
Gate-Drain Charge
--
6.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.0
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
16
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 4.0 A
V
GS
= 0 V, I
S
= 5.5 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
310
--
ns
Q
rr
Reverse Recovery Charge
--
2.1
--
μ
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQD6N60CTM 功能描述:MOSFET N-CH/600V/6A/ QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD6N60CTM_WS 功能描述:MOSFET 600V N-Ch MOSFET QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD6P25 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V P-Channel MOSFET
FQD6P25TF 功能描述:MOSFET 250V P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD6P25TM 功能描述:MOSFET P-CH/250V/4.7A/1.1OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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