參數(shù)資料
型號： FQD5P10
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V P-Channel MOSFET
中文描述： 3.6 A, 100 V, 1.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 648K
代理商： FQD5P10
2002 Fairchild Semiconductor Corporation
F
QF E T
TM
Rev. B, August 2002
FQD5P10 / FQU5P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
-3.6A, -100V, R
DS(on)
= 1.05
@V
GS
= -10 V
Low gate charge ( typical 6.3 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD5P10 / FQU5P10
-100
-3.6
-2.28
-14.4
±
30
55
-3.6
2.5
-6.0
2.5
25
0.2
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
5.0
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
S
D
G
相關(guān)PDF資料
PDF描述
FQU5P10 100V P-Channel MOSFET
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FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQD5P10_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET
FQD5P10TF 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD5P10TM 功能描述:MOSFET 100V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD5P20 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET
FQD5P20_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET
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