參數(shù)資料
型號(hào)： FQD18N20V2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 15 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT, DPAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 615K
代理商： FQD18N20V2
2002 Fairchild Semiconductor Corporation
F
QF E T
TM
Rev. B1, August 2002
FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
15A, 200V, R
DS(on)
= 0.14
@V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD18N20V2 / FQU18N20V2
200
15
9.75
60
±
30
340
15
8.3
6.5
2.5
83
0.67
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.5
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
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FQD19N10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel MOSFET
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