參數(shù)資料
型號(hào)： FQB9P25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V P-Channel MOSFET
中文描述： 9.4 A, 250 V, 0.62 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 573K
代理商： FQB9P25
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A2, December 2000
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.8mH, I
= -9.4A, V
= -50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
-9.4A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250
μ
A
-250
--
--
V
Breakdown Voltage Temperature
I
D
= -250
μ
A, Referenced to 25°C
--
-0.2
--
V/°C
V
DS
= -250 V, V
GS
= 0 V
V
DS
= -200 V, T
C
= 125°C
V
GS
= -30 V, V
DS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
-1
-10
-100
100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
μ
A
-3.0
--
-5.0
V
V
GS
= -10 V, I
D
= -4.7 A
--
0.48
0.62
V
DS
= -40 V, I
D
= -4.7 A
--
5.7
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
910
170
27
1180
220
35
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= -125 V, I
D
= -9.4 A,
R
G
= 25
--
--
--
--
--
--
--
20
150
45
65
29
7.6
14
50
310
100
140
38
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -200 V, I
D
= -9.4 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
-9.4
-37.6
-5.0
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= -9.4 A
V
GS
= 0 V, I
S
= -9.4 A,
dI
F
/ dt = 100 A/
μ
s
190
1.45
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