參數(shù)資料
型號(hào): FQB95N03L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PWM Optimized Power MOSFET
中文描述: 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 229K
代理商: FQB95N03L
2002 Fairchild Semiconductor Corporation
FQB95N03L Rev. B1
F
SABER Electrical Model
REV October 2002
template FQB95N03L n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 1.9e-11, nl=1.075 , rs = 4.2e-3, trs1 = 9e-4, trs2 = 1e-6, xti=2.2, cjo = 1.1e-9, tt = 8e-11, m = 0.49,)
dp..model dbreakmod = (rs =0.17, trs1 = 1e-3, trs2 = -8.9e-6)
dp..model dplcapmod = (cjo = 8.2e-10, isl=10e-30, nl=10, m=0.45)
m..model mmedmod = (type=_n, vto = 1.9, kp=3, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 2.35, kp = 90, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.6, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -4.0, voff = -0.8)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -0.8, voff = -4.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.3, voff = 0.2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.2, voff = -0.3)
c.ca n12 n8 = 1.5e-9
c.cb n15 n14 = 1.75e-9
c.cin n6 n8 = 2.35e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 4.58e-9
l.lsource n3 n7 = 1.47e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1e-3, tc2 = -7e-7
res.rdrain n50 n16 = 2.5e-3, tc1 = 7e-3, tc2 = 1e-5
res.rgate n9 n20 = 3.4
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 45.8
res.rlsource n3 n7 = 14.7
res.rslc1 n5 n51= 1e-6, tc1 = 1e-3, tc2 = 1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.55e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.8e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -2.7e-3, tc2 = -1e-5
spe.ebreak n11 n7 n17 n18 = 32.7
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e-6/200))** 5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
D2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相關(guān)PDF資料
PDF描述
FQB9N08 80V N-Channel MOSFET
FQB9N15 150V N-Channel MOSFET
FQI9N15 150V N-Channel MOSFET(漏源電壓為150V的N溝道增強(qiáng)型MOSFET)
FQB9N25C 250V N-Channel MOSFET
FQI9N25C 250V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB95N03LTM 功能描述:MOSFET 30V N-Channel Logic PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB9N08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel MOSFET
FQB9N08L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET
FQB9N08LTM 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB9N08TM 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube