參數(shù)資料
型號(hào)： FQA10N60C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 10 A, 600 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 631K
代理商： FQA10N60C
2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
F
QF E T
TM
FQA10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
10A, 600V, R
DS(on)
= 0.73
@V
GS
= 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQA10N60C
600
10
6
40
±
30
700
10
19.2
4.5
192
1.53
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.65
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
S
!
!
!
D
G
TO-3P
FQA Series
G
S
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQA10N80 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQA10N80 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-3P
FQA10N80_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA10N80_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
FQA10N80_F109 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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