參數(shù)資料
型號: FP10R06KL4B3V6
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/11頁
文件大?。?/td> 191K
代理商: FP10R06KL4B3V6
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R06KL4B3
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
T
vj
=25°C
V
RRM
800
V
Durchlastrom Grenzeffektivwert pro Chip
RMS forward current per chip
T
C
=80°C
I
FRMSM
23
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T
C
=80°C
I
RMSmax
36
A
Stostrom Grenzwert
surge forward current
Grenzlastintegral
I
2
t - value
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
I
FSM
197
158
194
125
A
A
I
2
t
A
2
s
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=25°C
V
CES
600
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
=80°C
T
C
= 25 °C
I
C,nom.
I
C
10
15
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
=80°C
I
CRM
20
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
55
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
I
F
10
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
20
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
12
A
2
s
prepared by: Thomas Passe
date of publication: 2002-02-15
approved by: Ingo Graf
revision: 6
1(11)
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