參數(shù)資料
型號(hào): FOD817B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光電耦合器
英文描述: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: LEAD FREE, DIP-4
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 163K
代理商: FOD817B
8/19/04
Page 2 of 9
2004 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
FOD817
Series
*Typical values at T
A
= 25°C.
*Typical values at T
A
= 25°C.
NOTES
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
INDIVIDUAL COMPONENT CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Terminal Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Test Conditions
Symbol
Min
Typ*
Max
Unit
(I
F
= 20 mA)
V
F
1.2
1.4
V
(V
R
= 4.0 V)
I
C
R
30
10
250
μA
pF
(V = 0, f = 1 kHz)
t
(I
(I
(V
C
= 0.1 mA, I
= 10 μA, I
= 20 V, I
F
= 0)
= 0)
= 0)
BV
BV
I
CEO
70
6
100
V
V
nA
E
F
ECO
CE
F
CEO
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
Current Transfer Ratio
(I
F
= 5 mA, V
CE
= 5 V) (note 1)
CTR
FOD817
50
600
%
FOD817A
80
160
%
FOD817B
130
260
%
FOD817C
200
400
%
FOD817D
300
600
%
Collector-Emitter
Saturation Voltage
AC Characteristic
(I
F
= 20 mA, I
C
= 1 mA)
V
CE (SAT)
0.1
0.2
V
Rise Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
) (note 2)
t
r
4
18
μs
Fall Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
) (note 2)
t
f
3
18
μs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage (note 3)
f = 60Hz, t = 1 min
V
ISO
5000
Vac(rms)
pf
Isolation Resistance
(V
I-O
= 0, f = 1 MHz)
= 500 VDC)
R
ISO
5 x 10
10
10
11
Isolation Capacitance
(V
I-O
C
ISO
0.6
1.0
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