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參數(shù)資料
| 型號(hào)： | foa1121 |
| 廠商： | SIEMENS AG |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | 1.25 Gbit/s Transimpedance Amplifier(互阻抗放大器) |
| 中文描述： | 1.25 Gbit / s的阻放大器（互阻抗放大器） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 157K |
| 代理商： | FOA1121 |
FOA1121A1
FOA1122A1
Semiconductor Group
3
July 1998
Electrical Characteristics
Note: 1) Except IN-pin
2) HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993.
Recommended Operating Conditions
Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device:
PCB area: 10 cm × 10 cm × 1.5 mm; copper area approx. 60 %; via holes to ground layer
underneath the device; all pins soldered.
2) Do not exceed the maximum junction temperature. If used as packaged version, provide
sufficient PCB heat sink to the device by soldering all pins and sufficient copper area
underneath the chip (see note 1).
Absolute Maximum Ratings
Stresses listed below here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Ambient temperature T
amb
= -40
°
C ... +85 °C
Parameter
Symbol
Limit Values
min.
-0.5
-40
-40
Unit
Remarks
max.
6.0
125
150
85/85
Supply voltage
Junction temperature
Storage temperature
Relative ambient humidity
ESD voltage
V
CC
T
j
T
S
V
°
C
°
C
%/
°
C
V
no condensation
note 1) and 2)
V
ESD
500
Ambient temperature T
amb
= -40
°
C ... +85 °C
Parameter
Symbol
Limit Values
min.
typ.
+4.5
+5.0
1.25
Unit
Remarks
max.
+5.5
Supply voltage
Data transmission rate
Supply current
Thermal resistance
Junction temperature
V
CC
V
Gbit/s
mA
K/W
°
C
I
CC
Θ
JA
T
j
46
140
see note 1)
see note 2)
-10
+125
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