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參數(shù)資料
| 型號： | FN4F4N |
| 廠商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| 中文描述： | 電阻內(nèi)置型PNP晶體管 |
| 文件頁數(shù)： | 15/22頁 |
| 文件大?。?/td> | 327K |
| 代理商： | FN4F4N |
Data Sheet D16491EJ2V0DS
15
FN4xxx
[FN4F4Z]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
I
C
0
2
4
6
8
10
50
40
30
20
10
0
300
250
200
150
100
50
I
B
=
350 A
μ
V
CE
- Collector to Emitter Voltage - V
V
C
0
- 0.1
- 0.2
- 0.3
- 0.4
- 0.5
0
- 20
- 40
- 60
- 80
V
IN
= 5.0 V
10.0 V
15.0 V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
h
F
10
100
1000
- 1
- 10
- 100
V
CE
=
5.0 V
T
A
= 75°C
25°C
25°C
I
C
- Collector Current - mA
V
C
- 0.01
- 0.1
- 1
- 1
- 10
- 100
I
C
= 10
T
A
= 75°C
25°C
25°C
I
B
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
V
I
- 0.1
- 1
- 10
- 100
- 1
- 10
- 100
V
CE
=
0.2 V
T
A
=
25°C
25°C
75°C
I
C
- Collector Current - mA
I
C
μ
A
- 1
- 10
- 100
- 1000
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
V
CE
=
5.0 V
25°C
25°C
T
A
= 75°C
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
R
0
10
20
30
40
50
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FN4F4Z | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4A4M | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4A4P | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4A4Z | RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FO106 | Low Voltage Tungsten Halogen Lamps with Reflector |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FN4F4Z | 制造商:NEC 制造商全稱:NEC 功能描述:RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4L3M | 制造商:NEC 制造商全稱:NEC 功能描述:RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4L3M(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述:Trans Digital BJT PNP 50V 100mA 3-Pin SC-59 T/R |
| FN4L3N | 制造商:NEC 制造商全稱:NEC 功能描述:RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
| FN4L3N(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
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