參數(shù)資料
型號: FMS2020-001
英文描述: GaAs Multi-Purpose Wide Band SPDT Switch
中文描述: 砷化鎵多功能寬帶SPDT開關
文件頁數(shù): 1/6頁
文件大?。?/td> 181K
代理商: FMS2020-001
Preliminary Data Sheet
2.2
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email:
sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2020QFN
GaAs Multi-Purpose Wide Band SPDT Switch
Features:
3x3x0.9mm Packaged pHEMT Switch
Suitable for L, S, and C-band digital
cellular, cordless telephony and WLAN
applications
High isolation, 25dB typ at 2.5GHz
Low insertion loss, 0.5dB typ at 2.5GHz
Low insertion loss, 1.0dB typ at 6GHz
P0.1dB > 38dBm at 2GHz
Description and Applications:
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5
μ
m switch process technology, which offers leading
edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C
band wireless applications and WLAN access points where high linearity switching is required.
Electrical Specifications:
(T
AMBIENT
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Functional Schematic
Min
Typ
Max
Units
Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
2.0 – 3.0 GHz
3.0 – 4.0 GHz
4.0 – 5.0 GHz
5.0 –6.0 GHz
0.4
0.45
0.55
0.65
0.75
0.95
dB
dB
dB
dB
dB
dB
Return Loss
0.5 – 2.5 GHz
2.5 – 5.0 GHz
23
18
dB
dB
Isolation
0.5 – 1.0 GHz
1.0 – 2.5 GHz
2.5 – 6.0 GHz
30
25
18
dB
dB
dB
Input power at 0.1dB compression point
1.0 GHz
2.0 GHz
2.5 GHz
6.0 GHz
>38
>38
>37
>33
dBm
dBm
dBm
dBm
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
Switching speed : T rise, T fall
T on, T off
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
<1.0
μ
s
μ
s
Control Current
+35dBm RF input @1GHz
<10
μ
A
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
All unused ports terminated in 50
.
ANT
V1
RF1
V2
RF2
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