參數(shù)資料
型號: FMMT918
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: RES 5K-OHM 0.1% 0.063W 50PPM THIN-FILM SMD-0402 TR-7-PA ROHS
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 47K
代理商: FMMT918
SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 JANUARY 1996
PARTMARKING DETAILS
3B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
3
V
Continuous Collector Current
I
C
100
mA
Power Dissipation at T
amb
=25°C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
30
V
I
C
=1
μ
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
15
V
I
C
=3mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
3
V
I
E
=10
μ
A, I
C
=0
Collector Cut-Off Current
I
CBO
0.05
μ
A
V
CB
=15V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4
V
I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=10mA, I
B
=1mA
Static Forward Current
Transfer Ratio
h
FE
20
I
C
=3mA, V
CE
=1V
Transition Frequency
f
T
600
MHz
I
=4mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
3.0
1.7
pF
pF
V
CB
=0V, f=1MHz
V
CB
=10V, f=1MHz
Input Capacitance
C
ibo
1.6
pF
V
EB
=0.5V,f=1MHz
Noise Figure
N
6.0
dB
V
=6V, I
=1mA
f=60MHz, R
G
=400
Common Emitter
Power Gain
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
G
pe
15
dB
V
=12V, I
C
=6mA
f=200MHz
FMMT918
C
B
E
SOT23
3 - 168
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