參數(shù)資料
型號: FMMT6520
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
中文描述: 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 49K
代理商: FMMT6520
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995
%
FEATURES
*
350 Volt V
CEO
*
Gain of 15 at I
C
=-100mA
APPLICATIONS
*
SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL 520
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-350
V
Collector-Emitter Voltage
V
CEO
-350
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
= 25°C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A, I
E
=0
I
C
=-1mA, I
B
=0*
I
E
=-10
μ
A, I
C
=0
V
CB
=-250V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, V
CE
=-10V*
Breakdown Voltages
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
-350
V
-350
V
-5
V
Cut-Off Currents
-50
nA
-50
nA
Collector-Emitter
Saturation Voltage
-0.3
-0.35
-0.5
-1.0
V
V
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.75
-0.85
-0.90
V
V
V
Base-Emitter Turn-On
Voltage
V
BE(on)
-2.0
V
Static Forward Current
Transfer Ratio
h
FE
20
30
30
20
15
200
200
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
V
CB
=20V, f=1MHz
I
=-10mA, V
CE
=-20V,
f=20MHz
Output Capacitance
C
obo
f
T
6
pF
Transition Frequency
50
MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
FMMT6520
C
B
E
SOT23
3 - 172
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