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參數(shù)資料
| 型號： | FMMT614 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR |
| 中文描述： | 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 148K |
| 代理商： | FMMT614 |
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 APRIL 1996
FEATURES
*
h
FE
up to 5k at I
c
= 500mA
*
Fast switching
*
Low V
CE(sat)
at High I
c
PARTMARKING DETAILS 614
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=10
μ
A, I
E
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
300
V
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
100
130
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
14
V
I
E
=10
μ
A, I
C
=0
Collector Cut-Off Current
I
CBO
I
CES
I
EBO
V
CE(sat)
0.02
10
nA
μ
A
V
CB
=100V, I
E
=0
V
CES
=100V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=500mA, I
B
=5mA*
I
C
=100mA, I
B
=0.1mA
I
C
=500mA, I
B
=5mA*
Collector Cut-Off Current
10
Emitter Cut-Off Current
100
nA
Collector-Emitter
Saturation Voltage
0.9
0.78
1.0
0.9
V
V
Base-Emitter Saturation
Voltage
V
BE(sat)
1.7
1.9
V
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5
1.8
V
I
C
=500mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
15K
5K
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
V
CB
=10V, f=100mHz
I
C
=100
μ
A, I
B
=0.1mA
V
S
=10V
Output Capacitance
C
obo
t
on
t
off
6
pF
μ
s
μ
s
Switching Times
0.7
2.5
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.
FMMT614
C
B
E
3 - 147
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMMT614 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR DARLINGTON SOT-23 |
| FMMT614TA | 功能描述:達(dá)林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FMMT614TC | 功能描述:達(dá)林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FMMT617 | 制造商:Zetex 功能描述:Bulk 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-23 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-23 制造商:Diodes Incorporated 功能描述:TRANSISTOR, BIPOLAR, NPN, 15V, 3A, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:120MHz; Power Dissipation Pd:625mW; DC Collector Current:3A; DC Current Gain hFE:300 ;RoHS Compliant: Yes |
| FMMT617TA | 功能描述:兩極晶體管 - BJT NPN SuperSOT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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